NEC 2SA1977
PNP EPITAXIAL SILICON TRANSISTOR
| Part No. | 2SA1977 |
|---|---|
| Datasheet | 2SA1977 Download |
| Manufacturer |  NEC |
| Description | PNP EPITAXIAL SILICON TRANSISTOR |
| Buy | Stock & Price |
FEATURES
● PACKAGE DIMENSION (in millimeters) _0.2 2.8+ 0.4 +0.1 –0.05 High fT fT = 8.5 GHz TYP. High gain | S21e | = 12.0 dB TYP. @f = 1.0 GHz, VCE = −8 V, IC = −20 mA 2 1.5 0.65 +0.1 –0.15● 0.95
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● Equivalent NPN transistor is the 2SC3583. _0.2 2.9+ High-speed switching characterstics 2 0.95 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCB0 VCE0 VEB0 IC PT Tj Tstg Rating −20 −12 −3.0 −50 200 150 −65 to +150 Unit V V V mA mW °C °C 1.1 to 1.4 0.3 Marking 0.16 +0.1 –0.06
ELECTRICAL CHARACTERISTICS
(TA = 25 °C) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Collector Capacitance Insertion Power Gain Noise Figure Symbol ICB0 IEB0 hFE fT Cre* | S21e | NF 2 PIN CONNECTIONS 1: Emitter 2: Base 3: Collector Marking; T92 Test Conditions VCB = −10 V VEB = −1 V VCE = −8 V, IC = −20 mA VCE = −8 V, IC = −20 mA, f = 1 GHz VCB = −10 V, IE = 0, f = 1 MHz VCE = −8 V, IC = −20 mA, f = 1.0 GHz VCE = −8 V, IC = −3 mA, f = 1 GHz MIN.
