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DATA SHEET PRELIMINARY DATA SHEET
Silicon Transistor
2SA1978
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER
FEATURES
•
High fT fT = 5.5 GHz TYP. | S21e | = 10.0 dB TYP. @f = 1.0 GHz, VCE = −10 V, IC = −15 mA
2
PACKAGE DIMENSIONS (in milimeters)
_0.2 2.8+
0.4 +0.1 –0.05
• • • •
1.5
0.65 +0.1 –0.15
High speed switching characteristics Equivalent NPN transistor is the 2SC2351.
0.95 _0.2 2.9+
Alternative of the 2SA1424.
2
0.95
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
Symbol VCB0 VCE0 VEB0 IC PT Ti Tstg
Rating −20 −12 −3.0 −50 200 150 −65 to +150
Unit V V
1.1 to 1.4 0.3
Marking
0.16 +0.1 –0.
2SA1978 Datasheet
