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2SA1978 - PNP EPITAXIAL SILICON TRANSISTOR

Key Features

  • High fT fT = 5.5 GHz TYP. | S21e | = 10.0 dB TYP. @f = 1.0 GHz, VCE =.
  • 10 V, IC =.
  • 15 mA 2.

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DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SA1978 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES • High fT fT = 5.5 GHz TYP. | S21e | = 10.0 dB TYP. @f = 1.0 GHz, VCE = −10 V, IC = −15 mA 2 PACKAGE DIMENSIONS (in milimeters) _0.2 2.8+ 0.4 +0.1 –0.05 • • • • 1.5 0.65 +0.1 –0.15 High speed switching characteristics Equivalent NPN transistor is the 2SC2351. 0.95 _0.2 2.9+ Alternative of the 2SA1424. 2 0.95 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCB0 VCE0 VEB0 IC PT Ti Tstg Rating −20 −12 −3.0 −50 200 150 −65 to +150 Unit V V 1.1 to 1.4 0.3 Marking 0.16 +0.1 –0.