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2SB1572 - PNP SILICON EPITAXIAL TRANSISTOR

General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Key Features

  • Low VCE(sat): VCE(sat)1 ≤.
  • 0.4 V.
  • Complementary to 2SD2403.

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DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR 2SB1572 PNP SILICON EPITAXIAL TRANSISTOR FEATURES • Low VCE(sat): VCE(sat)1 ≤ −0.4 V • Complementary to 2SD2403 PACKAGE DRAWING (Unit: mm) 4.5±0.1 1.6±0.2 1.5±0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO −80 Collector to Emitter Voltage VCEO −60 Emitter to Base Voltage VEBO −6.0 Collector Current (DC) IC(DC) −3.0 Note1 Collector Current (pulse) IC(pulse) −5.0 Base Current (DC) IB(DC) −0.2 Note1 Base Current (pulse) IB(pulse) −0.4 Note2 Total Power Dissipation PT 2.0 Junction Temperature Tj 150 Storage Temperature Range Tstg –55 to + 150 Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50% 2 2. When mounted on ceramic substrate of 16 cm x 0.7 mm V V V A A A A W °C °C 0.8 MIN. E 0.42 ±0.06 1.5 C B 0.47 ±0.06 3.0 0.42 ±0.06 0.