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2SC4095 - NPN SILICON EPITAXIAL TRANSISTOR

General Description

The 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.

Key Features

  • excellent power gain with very low-noise figures. 2SC4095 employs direct nitiride passivated base surface process (DNP process) which is an NEC proprietary new fabrication technique which provides excellent noise figures at high current values. excellent associated gain and very wide dynamic range. This allows 2.9±0.2 (1.8) 0.85 0.95.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4095 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION The 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. 2SC4095 features excellent power gain with very low-noise figures. 2SC4095 employs direct nitiride passivated base surface process (DNP process) which is an NEC proprietary new fabrication technique which provides excellent noise figures at high current values. excellent associated gain and very wide dynamic range. This allows 2.9±0.2 (1.8) 0.85 0.95 PACKAGE DIMENSIONS (Units: mm) 0.4 −0.05 0.4 −0.05 0.4 0.16 −0.06 +0.1 2.8 −0.3 +0.2 1.5 −0.1 2 3 4 5° 0 to 0.1 5° +0.2 +0.1 +0.1 • NF = 1.8 dB TYP. @ f = 2.