NEC 2SC4783
The 2SC4783 is NPN silicon epitaxial transistor. When mounted on ceramic substrate of 3.0 cm x 0.64 mm ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Collector Cut-off Current Emitter Cut-off Current DC Current Gain Note SYMBOL ICBO IEBO hFE1 hFE2 TEST CONDITIONS VCB = 60 V, IE = 0 VEB = 5.0 V, IC = 0 VCE = 6.0 V, IC = 0.1 mA VCE = 6.0 V, IC = 1.0 mA VCE = 6.0 V, IC = 1.0 mA IC = 100 mA, IB = 10 mA IC = 100 mA, IB = 10 mA VCE = 6.0 V, IE = −10 mA VCE = 6.0 V, IE = 0, f = 1.0 MHz MIN.| Part No. | 2SC4783 |
|---|---|
| Datasheet | 2SC4783 Download |
| Manufacturer |  NEC |
| Description | NPN SILICON TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
The 2SC4783 is NPN silicon epitaxial transistor. PACKAGE DRAWING (Unit: mm) 0.3 ± 0.05 0.1 +0.1 –0.05FEATURES
1.6 ± 0.1 0.8 ± 0.1● High DC current gain: hFE2 = 200 TYP.
● High voltage: VCEO = 50 V 3 0 to 0.1 2 0.2 +0.1 –0 0.5 0.5 1.0 1.6 ± 0.1 0.6 0.75 ± 0.05 1
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) Note1 Note2 VCBO VCEO VEBO IC(DC) IC(pulse) PT Tj Tstg 60 50 5.0 100 200 200 150 –55 to + 150 V V V mA mA mW °C °C Total Power Dissipation (TA = 25°C) Junction Temperature Storage Temperature Range 1: Emitter 2: Base 3: Collector Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50% 2 2. TYP. MAX. 100 100 UNIT nA nA − 50 90 200 0.62 0.15 0.86 150 250 3.0 4.0 0.3 1.0 600 − V V V MHz pF Base to Emitter Voltage Note Note VBE VCE(sat) VBE(sat) fT Cob Collector Saturation Voltage Base Saturation Voltage Gain Bandwidth Product Output Capacitance Note Note Pulsed: PW ≤ 350 µs...
