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2SC5178 - NPN TRANSISTOR

Datasheet Summary

Features

  • Low current consumption and high gain |S21e|2 = 11.5 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 10.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 0.4.
  • 0.05 +0.1.

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Datasheet Details

Part number 2SC5178
Manufacturer NEC
File Size 82.03 KB
Description NPN TRANSISTOR
Datasheet download datasheet 2SC5178 Datasheet
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Full PDF Text Transcription

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DATA SHEET SILICON TRANSISTOR 2SC5178 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consumption and high gain |S21e|2 = 11.5 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 10.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 0.4 –0.05 +0.1 PACKAGE DIMENSIONS (Units: mm) 0.4 –0.05 0.16 –0.06 +0.1 EIAJ: SC-61 2.9±0.2 (1.8) 0.850.95 2 PART NUMBER 2SC5178-T1 0.6 –0.05 1 4 5° 0 to 0.1 5° QUANTITY 3000 units/reel ARRANGEMENT Embossed tape, 8 mm wide, pins No. 3 (base) and No. 4 (emitter) facing the perforations Embossed tape, 8 mm wide, pins No. 1 (collector) and No. 2 (emitter) facing the perforations 1.1 –0.1 +0.2 +0.1 5° 0.
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