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2SC5179 - NPN TRANSISTOR

Datasheet Summary

Features

  • Low current consumption and high gain |S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz.
  • Small Mini-Mold package EIAJ: SC-70.

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Datasheet Details

Part number 2SC5179
Manufacturer NEC
File Size 57.85 KB
Description NPN TRANSISTOR
Datasheet download datasheet 2SC5179 Datasheet
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Full PDF Text Transcription

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DATA SHEET SILICON TRANSISTOR 2SC5179 NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consumption and high gain |S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • Small Mini-Mold package EIAJ: SC-70 PACKAGE DIMENSIONS (Units: mm) 2.1±0.1 1.25±0.1 2.0±0.2 +0.1 0.3 –0 0.65 ORDERING INFORMATION PART NUMBER 2SC5179-T1 QUANTITY ARRANGEMENT Embossed tape, 8 mm wide, pin No. 3 (Collector) facing the perforations Embossed tape, 8 mm wide, pins No. 1 (Emitter) and No. 2 (Base) facing the perforations 2 T84 0.65 3000 units/reel 2SC5179-T2 0.3 Marking evaluation (available in batches of 50).
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