2SC5369 Description
PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5369 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION.
2SC5369 Key Features
- High f T 14 GHz TYP
- High gain | S 21 e | 2 = 14 dB TYP
- NF = 1.3 dB, @f = 2 GHz, VCE = 3 V, IC = 3 mA
- 6-pin small mini mold package @f = 2 GHz, V CE = 3 V, IC = 10 mA