Datasheet4U Logo Datasheet4U.com

2SC5369 - NPN TRANSISTOR

Key Features

  • High f T 14 GHz TYP.
  • High gain | S 21 e | 2 = 14 dB TYP.
  • NF = 1.3 dB, @f = 2 GHz, VCE = 3 V, IC = 3 mA.
  • 6-pin small mini mold package @f = 2 GHz, V CE = 3 V, IC = 10 mA.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC536 Silicon NPN transistor BLUE ROCKET ELECTRONICS
2SC536 NPN Transistor WEJ
2SC536 TO-92 Plastic Encapsulate Transistors Jiangsu Changjiang Electronics Technology
2SC536 NPN Silicon Transistor SEMTECH
2SC536 NPN Silicon Transistor Bluecolour

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SC5336 NPN TRANSISTOR
2SC5337 NPN TRANSISTOR
2SC5338 NPN TRANSISTOR
2SC5004 NPN TRANSISTOR
2SC5005 NPN TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5369 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION FEATURES • High f T 14 GHz TYP. • High gain | S 21 e | 2 = 14 dB TYP. • NF = 1.3 dB, @f = 2 GHz, VCE = 3 V, IC = 3 mA • 6-pin small mini mold package @f = 2 GHz, V CE = 3 V, IC = 10 mA PACKAGE DIMENSION (in mm) 2.1±0.1 1.25±0.1 0.2 –0 +0.1 1 0.65 0.65 2.0±0.2 1.3 2 3 ABSOLUTE MAXIMUM RATINGS (T A = 25 °C) 0.9±0.1 PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL V CBO V CEO V EBO IC PT TI T stg RATING 9 6 2 30 150 150 –65 to +150 UNIT V V V mA mW °C °C 0.7 4 5 6 PIN CONNECTIONS 1. Emitter 2. Emitter 3. Base 4. Emitter 5. Emitter 6.