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PRELIMINARY DATA SHEET
SILICON TRANSISTOR
2SC5455
NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD
FEATURE
• Ideal for medium-output applications • High gain, low noise • Small reverse transfer capacitance • Can operate at low voltage
PACKAGE DIMENSIONS (in mm)
0.4 –0.05
1.5 –0.1
+0.2
2
2.9 ± 0.2 (1.8) 0.85 0.95
3 4
5° 5° 5°
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT Tj Tstg RATING 9 6 2 100 200 150 –65 to +150 UNIT V
1
0.6 –0.05
+0.1
1.1–0.1 0.8
+0.2
V V mA mW °C °C
0 to 0.
2SC5455 Datasheet
