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2SC5455 - NPN TRANSISTOR

Key Features

  • 236 0.245 0.247 0.261 0.260 0.279 0.274 0.296 0.298 0.318 0.323 0.341 0.347 S 22 ANG.
  • 35.6.
  • 58.4.
  • 73.0.
  • 83.6.
  • 91.6.
  • 98.7.
  • 105.3.
  • 111.0.
  • 116.8.
  • 121.8.
  • 127.6.
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  • 140.8.
  • 146.1.
  • 148.7.
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  • 162.1.
  • 166.9.
  • 167.6.
  • 172.6.
  • 172.3.
  • 175.9.
  • 175.6.
  • 179.5 179.6 177.1 175.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SC5454 NPN TRANSISTOR
2SC5408 NPN TRANSISTOR
2SC5409 NPN TRANSISTOR
2SC5431 NPN TRANSISTOR
2SC5432 NPN TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5455 NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE • Ideal for medium-output applications • High gain, low noise • Small reverse transfer capacitance • Can operate at low voltage PACKAGE DIMENSIONS (in mm) 0.4 –0.05 1.5 –0.1 +0.2 2 2.9 ± 0.2 (1.8) 0.85 0.95 3 4 5° 5° 5° ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT Tj Tstg RATING 9 6 2 100 200 150 –65 to +150 UNIT V 1 0.6 –0.05 +0.1 1.1–0.1 0.8 +0.2 V V mA mW °C °C 0 to 0.