NEC 2SC5455
NPN TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT Tj Tstg RATING 9 6 2 100 200 150 –65 to +150 UNIT V 1 0.6 –0.05 +0.1 1.1–0.1 0.8 +0.2 V V mA mW °C °C 0 to 0.1 5°ELECTRICAL CHARACTERISTICS
(TA = 25 °C) PARAMETER Collector Cut-off Current Emitter Cut-off Current DC Current Gain Gain Bandwidth Product Reverse Transfer Capacitance Insertion Power Gain Noise Figure SYMBOL ICBO IEBO hFE fT Cre |S21e| NF 2 PIN CONNECTIONS 1: Collector 2: Emitter 3: Base 4: Emitter TEST CONDITIONS VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 30 mANote 1 MIN. TYP. MAX. 0.1 0.1 0.16 +0.1 –0.06 0.4 +0.1 –0.05 (1.9) 0.4 –0.05 +0.1 +0.1 2.8 –0.3 +0.2 UNIT µA µA 75 12.0 0.5 8.0 10.0 1.5 150 GHz 0.7 pF dB 2.5 dB VCE = 3 V, IC = 30 mA, f = 2 GHz VCB = 3 V, IE = 0, f = 1 MHzNote 2 VCE = 3 V, IC = 30 mA, f = 2 GHz VCE = 3 V, IC = 7 mA, f = 2 GHz Notes 1.