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2SC5604 - NPN SILICON RF TRANSISTOR

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Features

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  • High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz.
  • fT = 25 GHz “UHS0” (Ultra High Speed Process) technology adopted.
  • 3-pin lead-less minimold package (1005 PKG).

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Datasheet Details

Part number 2SC5604
Manufacturer NEC
File Size 159.04 KB
Description NPN SILICON RF TRANSISTOR
Datasheet download datasheet 2SC5604 Datasheet
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Full PDF Text Transcription

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5604 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE AMPLIFIER 3-PIN LEAD-LESS MINIMOLD FEATURES www.DataSheet4U.com • High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • fT = 25 GHz “UHS0” (Ultra High Speed Process) technology adopted • 3-pin lead-less minimold package (1005 PKG) ORDERING INFORMATION Part Number 2SC5604 2SC5604-T3 Quantity 50 pcs (Non reel) 10 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 2 (Base) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs.
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