2SC5617
2SC5617 is NPN SILICON RF TRANSISTOR manufactured by NEC.
FEATURES
- NF = 1.5 d B TYP. @ VCE = 3 V, IC = 3 m A, f = 2 GHz
- S21e2 = 11.0 d B TYP. @ VCE = 3 V, IC = 10 m A, f = 2 GHz
- 3-pin lead-less minimold package
ORDERING INFORMATION
Part Number 2SC5617 2SC5617-T3
Quantity 50 pcs (Non reel) 10 kpcs/reel
Supplying Form
- 8 mm wide embossed taping
- Pin 2 (Base) face the perforation side of the tape
Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO IC P Note tot
Tj Tstg
Ratings 9.0 6.0 2.0 30 140 150
- 65 to +150
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Unit V V V m A m W °C °C
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. P15643EJ1V0DS00 (1st edition) Date Published July 2001 NS CP(K) Printed in Japan
©
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Noise Figure
Reverse Transfer Capacitance
Symbol
Test Conditions
ICBO VCB = 5 V, IE = 0 m A
IEBO VBE = 1 V, IC = 0 m A h Note 1 FE
VCE = 3 V, IC = 10 m A f T VCE = 3 V, IC = 10 m A, f = 2 GHz
S21e2 VCE = 3 V, IC = 10 m A, f = 2 GHz
NF VCE = 3 V, IC = 3 m A, f = 2 GHz, ZS = Zopt
C Note 2 re
VCB = 3 V, IE = 0 m A, f = 1 MHz
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded h FE CLASSIFICATION
Ran...