2SC5606
2SC5606 is NPN TRANSISTOR manufactured by NEC.
FEATURES
- Suitable for high-frequency oscillation
- f T = 25 GHz technology adopted
- 3-pin ultra super minimold
ORDERING INFORMATION
Part Number 2SC5606 2SC5606-T1 Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form
- 8 mm wide embossed taping
- Pin 3 (collector) face the perforation side of the tape
Remark To order evaluation samples, consult your NEC sales representative (Unit sample quantity is 50 pcs).
ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot
Note
Ratings 15 3.3 1.5 35 115 150
- 65 to +150
Unit V V V m A m W °C °C
Tj Tstg
2 Note Mounted on 1.08 cm × 1.0 mm (t) glass epoxy substrate
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. P14658EJ2V0DS00 (2nd edition) Date Published April 2000 NS CP(K) Printed in Japan
The mark
- shows major revised points.
©
1999, 2000
ELECTRICAL CHARACTERISTICS (TA = +25 °C)
Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Noise Figure Reverse Transfer Capacitance Maximum Available Gain Maximum Stable Power Gain f T S21e NF Cre
Note 2 2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
ICBO IEBO h FE
Note 1
VCB = 5 V, IE = 0 m A VEB = 1 V, IC = 0 m A VCE = 2 V, IC = 5 m A
- - 50
- - 70
200 200 100 n A n...
