2SJ411 Datasheet | NEC

DATA SHEET MOS FIELD EFFECT TRANSISTOR P-CHANNEL SIGNAL MOS FET FOR SWITCHING The 2SJ411 is a P-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for power control switches and DC/DC converters. PACKAGE DIMENSIONS (in mm) 7.0 MAX. 1.2 0.8 ±0.1 3.0 MAX. Features - Radial taping supported - Can be directly driven by 5-V IC - Low ON resistance RDS(on) = 0.24 Ω MAX. @VGS = - 4 V, ID = - 2.5 A RDS(on) = 0.11 Ω MAX. @VGS = - 10 V, ID = - 2.5 A 0.6 ±0.1 0.6 ±0.1 0.6 ±0.1 0.55 ±0.1 EQUIVALENT...