NEC 2SJ411
The 2SJ411 is a P-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for power control switches and DC/DC converters.| Part No. | 2SJ411 |
|---|---|
| Datasheet | 2SJ411 Download |
| Manufacturer |  NEC |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Radial taping supported● Can be directly driven by 5-V IC
● Low ON resistance RDS(on) = 0.24 Ω MAX. @VGS = –4 V, ID = –2.5 A RDS(on) = 0.11 Ω MAX. @VGS = –10 V, ID = –2.5 A 0.6 ±0.1 0.6 ±0.1 0.6 ±0.1 1.71.7 0.55 ±0.1 G D S EQUIVALENT CIRCUIT Drain (D) Gate (G) Internal Diode 4.0 MAX. 1.5
ABSOLUTE MAXIMUM RATINGS
(TA = 25 ˚C) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) SYMBOL VDSS VGSS ID(DC) ID(pulse) PW ≤ 10 µs Duty cycle ≤ 1 % TA = 25 ˚C TC = 25 ˚C VGS = 0 VDS = 0 Gate Source (S) Protection Diode PIN CONNECTIONS G: Gate D: Drain S: Source TEST CONDITIONS RATING –30 –20/+10 ± 5.0 ± 20.0 12.0 MIN. UNIT V V A A 1.0 6.0 150 W W ˚C ˚C Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature PT1 PT2 Tch Tstg –55 to +150 The internal diode connected between the gate and source of this product is to protect the product from static electricity. If the product is used in a circuit where the rated voltage of the product may be exceeded, connect a protection circuit.
