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2SJ411 - P-Channel MOSFET

Key Features

  • Radial taping supported.
  • Can be directly driven by 5-V IC.
  • Low ON resistance RDS(on) = 0.24 Ω MAX. @VGS =.
  • 4 V, ID =.
  • 2.5 A RDS(on) = 0.11 Ω MAX. @VGS =.
  • 10 V, ID =.
  • 2.5 A 0.6 ±0.1 0.6 ±0.1 0.6 ±0.1 1.71.7 0.55 ±0.1 G D S.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ411 P-CHANNEL SIGNAL MOS FET FOR SWITCHING The 2SJ411 is a P-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for power control switches and DC/DC converters. PACKAGE DIMENSIONS (in mm) 7.0 MAX. 1.2 2.0 0.8 ±0.1 3.0 MAX. FEATURES • Radial taping supported • Can be directly driven by 5-V IC • Low ON resistance RDS(on) = 0.24 Ω MAX. @VGS = –4 V, ID = –2.5 A RDS(on) = 0.11 Ω MAX. @VGS = –10 V, ID = –2.5 A 0.6 ±0.1 0.6 ±0.1 0.6 ±0.1 1.71.7 0.55 ±0.1 G D S EQUIVALENT CIRCUIT Drain (D) Gate (G) Internal Diode 4.0 MAX. 1.