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2SJ448 - P-Channel MOSFET

General Description

The 2SJ448 is P-Channel MOS Field Effect Transistor designed for high voltage switching applications.

Key Features

  • Low On-Resistance RDS(on) = 2.0 Ω MAX. (@ VGS =.
  • 10 V, ID =.
  • 2.0 A).
  • 15.0 ±0.3 3 ±0.1 4 ±0.2 Built-in G-S Gate Protection Diodes High Avalanche Capability Ratings Isolated TO-220 Package.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SJ449 P-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ448 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ448 is P-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0 ±0.3 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2 FEATURES • Low On-Resistance RDS(on) = 2.0 Ω MAX. (@ VGS = –10 V, ID = –2.0 A) • • • • 15.0 ±0.3 3 ±0.1 4 ±0.2 Built-in G-S Gate Protection Diodes High Avalanche Capability Ratings Isolated TO-220 Package ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* VDSS VGSS ID(DC) ID(pulse) –250 m25 m4.0 m16 V V A A W W ˚C 1 2 3 0.7 ±0.1 2.54 13.5 MIN. 12.0 ±0.2 Low Ciss Ciss = 470 pF TYP. 1.3 ±0.2 1.5 ±0.2 2.54 0.65 ±0.1 2.5 ±0.