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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ462
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
DESCRIPTION
The 2SJ462 is a switching device which can be driven directly by an IC operating at 3 V. The 2SJ462 features a low on-state resistance and can be driven by a low voltage power source, so it is suitable for applications such as power management.
Package Drawings (unit : mm)
5.7 ±0.1 2.0 ±0.2
1.5 ±0.1
3.65 ±0.1
FEATURES
1.0
1 0.5 ±0.1
2
3
• Can be driven by a 2.5 V power source. • New-type compact package. Has advantages of packages for small signals and for power transistors, and compensates those disadvantages. • Low on-state resistance. RDS(ON) : 0.29 Ω MAX. @VGS = –2.5 V, ID = –0.5 A RDS(ON) : 0.19 Ω MAX. @VGS = –4.0 V, ID = –1.0 A
0.5 ±0.1 2.1 0.4 ±0.05 0.
2SJ462 Datasheet
