2SJ492 - P-Channel MOSFET

NEC

General Description

This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits.

Key Features

Low on-state resistance RDS(on)1 = 100 mΩ (MAX. ) (VGS =.
10 V, ID =.
10 A) RDS(on)2 = 185 mΩ (MAX. ) (VGS =.
4 V, ID =.
10 A).
Low Ciss: Ciss = 1210 pF (TYP. ).
Built-in gate protection diode.

📥 Download Datasheet

2SJ492 p-channel mosfet by NEC - Datasheet Preview

Datasheet Details

Part number	2SJ492
Manufacturer	NEC
File Size	72.06 KB
Description	P-Channel MOSFET
Datasheet	2SJ492 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SJ49	P-Channel MOSFET	Hitachi Semiconductor
2SJ496	P-Channel MOSFET	Hitachi Semiconductor
2SJ499	P-Channel MOSFET	Sanyo Semicon Device
2SJ400	P-Channel MOSFET	Sanyo Semicon Device
2SJ401	P-Channel MOSFET	Toshiba Semiconductor

Other Datasheets by NEC

Part Number	Description
2SJ493	P-Channel MOSFET
2SJ494	P-Channel MOSFET
2SJ495	P-Channel MOSFET
2SJ411	P-Channel MOSFET
2SJ448	P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ492 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SJ492 2SJ492-S 2SJ492-ZJ PACKAGE TO-220AB TO-262 TO-263 DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits. FEATURES • Low on-state resistance RDS(on)1 = 100 mΩ (MAX.) (VGS = –10 V, ID = –10 A) RDS(on)2 = 185 mΩ (MAX.) (VGS = –4 V, ID = –10 A) • Low Ciss: Ciss = 1210 pF (TYP.