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2SJ492 - MOS Field Effect Transistor

Key Features

  • Low on-state resistance RDS(on)1 = 100 m (MAX. ) (VGS = -10 V, ID = -10 A) RDS(on)2 = 185 m (MAX. ) (VGS =-4 V, ID =-10 A) Low Ciss: Ciss = 1210 pF (TYP. ) Built-in gate protection diode +0.2 5.28 -0.2 +0.2 8.7 -0.2 TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm +0.1 1.27 -0.1 +0.2 2.54 -0.2 15.25-+00..22 5.60 1.27+0.1 -0.1 0.1max 2.54+0.2 -0.2 5.08+0.1 -0.1 0.81+0.1 -0.1 2.54 0.4+0.2 -0.2 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage.

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SMD Type MOSFET MOS Field Effect Transistor 2SJ492 Features Low on-state resistance RDS(on)1 = 100 m (MAX.) (VGS = -10 V, ID = -10 A) RDS(on)2 = 185 m (MAX.) (VGS =-4 V, ID =-10 A) Low Ciss: Ciss = 1210 pF (TYP.) Built-in gate protection diode +0.2 5.28 -0.2 +0.2 8.7 -0.2 TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm +0.1 1.27 -0.1 +0.2 2.54 -0.2 15.25-+00..22 5.60 1.27+0.1 -0.1 0.1max 2.54+0.2 -0.2 5.08+0.1 -0.1 0.81+0.1 -0.1 2.54 0.4+0.2 -0.