Datasheet Summary
Silicon P-Channel MOS FET High Speed Power Switching
ADE-208-482 1st. Edition Features
- Low on-resistance R DS(on) = 0.12Ω typ. (at VGS =
- 10 V, I D =
- 2.5 A)
- 4V gate drive devices.
- Large current capacitance ID =
- 5 A
Outline
TO-92 Mod
1 1. Source 2. Drain 3....