2SJ496 Overview
2SJ496 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-482 1st.
2SJ496 Key Features
- Low on-resistance R DS(on) = 0.12Ω typ. (at VGS = -10 V, I D = -2.5 A)
- 4V gate drive devices
- Large current capacitance ID = -5 A
2SJ496 Datasheet Details
| Part number | 2SJ496 |
|---|---|
| Datasheet | 2SJ496_HitachiSemiconductor.pdf |
| File Size | 50.79 KB |
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| Description | P-Channel MOSFET |
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