2SJ493
Overview
This product is P-Channel MOS Field Effect Transistor designed for high current switching applications.
- Super low on-state resistance RDS(on)1 = 100 mΩ (MAX.) (VGS = -10 V, ID = -8 A) RDS(on)2 = 185 mΩ (MAX.) (VGS = -4 V, ID = -8 A)
- Low Ciss: Ciss = 1210 pF (TYP.)
- Built-in gate protection diode
