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2SJ493 - P-Channel MOSFET

General Description

This product is P-Channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Super low on-state resistance RDS(on)1 = 100 mΩ (MAX. ) (VGS =.
  • 10 V, ID =.
  • 8 A) RDS(on)2 = 185 mΩ (MAX. ) (VGS =.
  • 4 V, ID =.
  • 8 A).
  • Low Ciss: Ciss = 1210 pF (TYP. ).
  • Built-in gate protection diode.

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Datasheet Details

Part number 2SJ493
Manufacturer NEC
File Size 66.60 KB
Description P-Channel MOSFET
Datasheet download datasheet 2SJ493 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ493 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SJ493 PACKAGE Isolated TO-220 DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 100 mΩ (MAX.) (VGS = –10 V, ID = –8 A) RDS(on)2 = 185 mΩ (MAX.) (VGS = –4 V, ID = –8 A) • Low Ciss: Ciss = 1210 pF (TYP.