2SJ494 - P-Channel MOSFET

NEC

General Description

This product is P-Channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

Super Low On-State Resistance RDS(on)1 = 50 m: Max. (VGS =.
10 V, ID =.
10 A) RDS(on)2 = 88 m: Max. (VGS =.
4 V, ID =.
10 A).
Low Ciss Ciss = 2360 pF Typ. 0.7±0.1 2.54.
Built-in Gate Protection Diode 13.5 MIN. 12.0±0.2.

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2SJ494 p-channel mosfet by NEC - Datasheet Preview

Datasheet Details

Part number	2SJ494
Manufacturer	NEC
File Size	71.90 KB
Description	P-Channel MOSFET
Datasheet	2SJ494 Datasheet

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2SJ492	P-Channel MOSFET
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DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ494 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter) 10.0±0.3 4.5±0.2 3.2±0.2 2.7±0.2 15.0±0.3 3±0.1 4±0.2 FEATURES • Super Low On-State Resistance RDS(on)1 = 50 m: Max. (VGS = –10 V, ID = –10 A) RDS(on)2 = 88 m: Max. (VGS = –4 V, ID = –10 A) • Low Ciss Ciss = 2360 pF Typ. 0.7±0.1 2.54 • Built-in Gate Protection Diode 13.5 MIN. 12.0±0.