2SJ494
Overview
This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter) 10.0±0.3 4.5±0.2 3.2±0.2 2.7±0.2 15.0±0.3 3±0.1 4±0.2.
- Super Low On-State Resistance RDS(on)1 = 50 m: Max. (VGS = -10 V, ID = -10 A) RDS(on)2 = 88 m: Max. (VGS = -4 V, ID = -10 A)
- Low Ciss Ciss = 2360 pF Typ.
- 7±0.1 2.54
- Built-in Gate Protection Diode
- 5 MIN.
- 0±0.2
