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2SJ492-ZJ - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-60V.
  • ID =-20 A.
  • RDS(ON) ＜ 100m Ω (VGS =-10V).
  • RDS(ON) ＜ 185mΩ (VGS =-4V).
  • Low Ciss: Ciss = 1210 pF (TYP. ) Drain Gate Body Diode Gate Protection Diode Source.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage (Note.1) Continuous Drain Current Pulsed Drain Current (Note.2) Single Avalanche Current (Note.3) Power Dissipation Single Avalanche Energy Tc = 25℃ Ta = 25℃ (Note.3) Thermal Resistance. Junction- to-A.

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SMD Type P-Channel MOSFET 2SJ492-ZJ MOSFET ■ Features ● VDS (V) =-60V ● ID =-20 A ● RDS(ON) ＜ 100m Ω (VGS =-10V) ● RDS(ON) ＜ 185mΩ (VGS =-4V) ● Low Ciss: Ciss = 1210 pF (TYP.) Drain Gate Body Diode Gate Protection Diode Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage (Note.1) Continuous Drain Current Pulsed Drain Current (Note.2) Single Avalanche Current (Note.3) Power Dissipation Single Avalanche Energy Tc = 25℃ Ta = 25℃ (Note.3) Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Junction Storage Temperature Range Symbol VDS VGS(AC) VGS(DC) ID IDM IAS PD EAS RthJA RthJC TJ Tstg Note.1: f = 20 kHz, Duty Cycle ≤ 10% (+Side) Note.2: PW ≤ 10 u s,Duty Cycle ≤ 1% Note.