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2SJ495 - P-Channel MOSFET

General Description

This product is P-Channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Super Low On-State Resistance 15.0 ± 0.3 3 ± 0.1 4 ± 0.2 RDS(on)2 = 56 mΩ MAX. (VGS =.
  • 4 V, ID =.
  • 15 A).
  • Low Ciss Ciss = 4120 pF TYP.
  • Built-in Gate Protection Diode.

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Datasheet Details

Part number 2SJ495
Manufacturer NEC
File Size 75.27 KB
Description P-Channel MOSFET
Datasheet download datasheet 2SJ495 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ495 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter) 10.0 ± 0.3 3.2 ± 0.2 4.5 ± 0.2 2.7 ± 0.2 FEATURES • Super Low On-State Resistance 15.0 ± 0.3 3 ± 0.1 4 ± 0.2 RDS(on)2 = 56 mΩ MAX. (VGS = –4 V, ID = –15 A) • Low Ciss Ciss = 4120 pF TYP.