2SJ495 Description
This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter) 10.0 ± 0.3 3.2 ± 0.2 4.5 ± 0.2 2.7 ± 0.2.
2SJ495 Key Features
- Super Low On-State Resistance
- Low Ciss Ciss = 4120 pF TYP
- Built-in Gate Protection Diode