2SJ495
Overview
This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter) 10.0 ± 0.3 3.2 ± 0.2 4.5 ± 0.2 2.7 ± 0.2.
- Super Low On-State Resistance
- 0 ± 0.3 3 ± 0.1 4 ± 0.2 RDS(on)2 = 56 mΩ MAX. (VGS = -4 V, ID = -15 A)
- Low Ciss Ciss = 4120 pF TYP.
- Built-in Gate Protection Diode
