| Part Number | 2SJ492 |
|---|---|
| Manufacturer | NEC |
| Overview |
This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits.
FEATURES
• Low on-state resistance RDS(on)1 = 100 mΩ (MAX.) (VGS = –10 V, ID = –10 .
* Low on-state resistance RDS(on)1 = 100 mΩ (MAX.) (VGS = *10 V, ID = *10 A) RDS(on)2 = 185 mΩ (MAX.) (VGS = *4 V, ID = *10 A) * Low Ciss: Ciss = 1210 pF (TYP.) * Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 . |
2SJ492 Datasheet
The 2SJ492 is a P-Channel MOSFET.
| Part Number | 2SJ492 |
|---|---|
| Description | 60V P-Channel MOSFET |
| Manufacturer | VBsemi |
| Overview |
2SJ492-VB
2SJ492-VB Datasheet P-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
- 60
0.0480 at VGS = - 10 V
0.0560 at VGS = - 4.5 V
ID (A) - 45 - 40
Qg (Typ.
* Halogen-free According to IEC 61249-2-21 Definition * Trench Power MOSFET * 100 % Rg and UIS Tested * Compliant to RoHS Directive 2002/95/EC APPLICATIONS * Power Switch * Load Switch in High Current Applications * DC/DC Converters GD S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = . |
| Part Number | 2SJ492 |
|---|---|
| Description | MOS Field Effect Transistor |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type MOSFET MOS Field Effect Transistor 2SJ492 Features Low on-state resistance RDS(on)1 = 100 m (MAX.) (VGS = -10 V, ID = -10 A) RDS(on)2 = 185 m (MAX.) (VGS =-4 V, ID =-10 A) Low Ciss: Ciss =. Low on-state resistance RDS(on)1 = 100 m (MAX.) (VGS = -10 V, ID = -10 A) RDS(on)2 = 185 m (MAX.) (VGS =-4 V, ID =-10 A) Low Ciss: Ciss = 1210 pF (TYP.) Built-in gate protection diode +0.2 5.28 -0.2 +0.2 8.7 -0.2 TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm +0.1 1.27 -0.1 +0.2 2.54 -0.2 15. |