NEC 2SJ598
The 2SJ598 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.| Part No. | 2SJ598 |
|---|---|
| Datasheet | 2SJ598 Download |
| Manufacturer |  NEC |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● Low on-state resistance: RDS(on)1 = 130 mΩ MAX. (VGS = –10 V, ID = –6 A) RDS(on)2 = 190 mΩ MAX. (VGS = –4.0 V, ID = –6 A)● Low Ciss: Ciss = 720 pF TYP.
● Built-in gate protection diode
● TO-251/TO-252 package ORDERING INFORMATION PART NUMBER PACKAGE 2SJ598 TO-251 (MP-3) 2SJ598-Z TO-252 (MP-3Z)
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 Total Power Dissipation (TC = 25°C) VDSS –60 V VGSS m20 V ID(DC) m12 A ID(pulse) m30 A PT 23 W Total Power Dissipation (TA = 25°C) PT 1.0 W Channel Temperature Tch 150 °C Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2 Tstg –55 to +150 °C IAS –12 A EAS 14.4 mJ (TO-251) (TO-252) Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = –30 V, RG = 25 Ω, VGS = –20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
