VBsemi Electronics 2SJ598
2SJ598-VB IS - Source Current (A) RDS(on) - On-Resistance (normalized) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 1.9 ID = 10 A 1.6 VGS = 10 V 10 1.3 TJ = 150 °C TJ = 25 °C 1.0 0.7 0.4 - 50 - 25 0 25 50 75| Part No. | 2SJ598 |
|---|---|
| Datasheet | 2SJ598 Download |
| Manufacturer | VBsemi Electronics |
| Description | 60V P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● Trench Power MOSFET
● 100 % UIS Tested
● Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
● High Side Switch for Full Bridge Converter● DC/DC Converter for LCD Display S G GDS Top View D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise note) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current, Single Pulse Repetitive Avalanche Energy, Single Pulsea IAS L = 0.1 mH EAS Power Dissipation TC = 25 °C TA = 25 °C PD Operating Junction and Storage Temperature Range TJ, Tstg THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Case Notes: a. Duty cycle 1 %. b. When mounted on 1" square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Based up on TC = 25 °C. t 10 s Steady State Symbol RthJA RthJC Limit - 60 ± 20 - 25 - 20 - 100 - 22 24...
