2SJ598 - 60V P-Channel MOSFET

VBsemi

Key Features

Halogen-free According to IEC 61249-2-21 Definition.
Trench Power MOSFET.
100 % UIS Tested.
Compliant to RoHS Directive 2002/95/EC.

2SJ598 60v p-channel mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	2SJ598
Manufacturer	VBsemi
File Size	274.75 KB
Description	60V P-Channel MOSFET
Datasheet	2SJ598 Datasheet

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2SJ598-VB 2SJ598-VB Datasheet P-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.053 at VGS = - 10 V 0.062 at VGS = - 4.5 V ID (A)d - 25 - 20 Qg (Typ) 26 TO-251 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Trench Power MOSFET • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • High Side Switch for Full Bridge Converter • DC/DC Converter for LCD Display S G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise note) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current, Single Pulse Repetitive Avalanche Energy, Single Pulsea IAS L = 0.