The 2SJ598 is a 60V P-Channel MOSFET.
| Package | TO-252 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 2.4 mm |
| Length | 6 mm |
| Width | 6 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | 2SJ598 Datasheet |
|---|---|
| Manufacturer | VBsemi |
| Overview |
2SJ598-VB
2SJ598-VB Datasheet P-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
- 60
0.053 at VGS = - 10 V
0.062 at VGS = - 4.5 V
ID (A)d - 25 - 20
Qg (Typ) 26
.
* Halogen-free According to IEC 61249-2-21 Definition * Trench Power MOSFET * 100 % UIS Tested * Compliant to RoHS Directive 2002/95/EC APPLICATIONS * High Side Switch for Full Bridge Converter * DC/DC Converter for LCD Display S G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 2. |
| Part Number | 2SJ598 Datasheet |
|---|---|
| Description | MOS Field Effect Transistor |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type MOS Field Effect Transistor 2SJ598 MOSFICET Features Low on-resistance RDS(on)1 = 130 m MAX. (VGS =-10 V, ID = -6 A) RDS(on)2 = 190 m MAX. (VGS = -4.0 V, ID =-6 A) Low Ciss: Ciss = 720 pF . Low on-resistance RDS(on)1 = 130 m MAX. (VGS =-10 V, ID = -6 A) RDS(on)2 = 190 m MAX. (VGS = -4.0 V, ID =-6 A) Low Ciss: Ciss = 720 pF TYP. Built-in gate protection diode +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +0.15 1.50 -0.15 3.80 +0.15 5.55. |
| Part Number | 2SJ598 Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc P-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤130mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and .
*Static drain-source on-resistance: RDS(on)≤130mΩ *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Built in gate protection diode *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Sourc. |
| Part Number | 2SJ598 Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | NEC |
| Overview |
The 2SJ598 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.
FEATURES
• Low on-state resistance: RDS(on)1 = 130 mΩ MAX. (VGS = –10 V, ID = –6 A) RDS(on)2 = 190 mΩ .
* Low on-state resistance: RDS(on)1 = 130 mΩ MAX. (VGS = *10 V, ID = *6 A) RDS(on)2 = 190 mΩ MAX. (VGS = *4.0 V, ID = *6 A) * Low Ciss: Ciss = 720 pF TYP. * Built-in gate protection diode * TO-251/TO-252 package ORDERING INFORMATION PART NUMBER PACKAGE 2SJ598 TO-251 (MP-3) 2SJ598-Z TO-252 (MP. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Newark | 2141 | 1+ : 1.67 USD 10+ : 1.11 USD 25+ : 1 USD 50+ : 0.894 USD |
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| Renesas | 2111 | 1+ : 1.52 USD 10+ : 0.962 USD 100+ : 0.6406 USD 500+ : 0.50264 USD |
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| DigiKey | 2111 | 1+ : 1.52 USD 10+ : 0.962 USD 100+ : 0.6406 USD 500+ : 0.50264 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| J598 | NEC | 2SJ598 |
| 2SJ598-Z | Kexin Semiconductor | P-Channel MOSFET |
| 2SJ598-ZK | Renesas | P-Channel Power MOSFET |