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2SJ598 - MOS Field Effect Transistor

Key Features

  • Low on-resistance RDS(on)1 = 130 m MAX. (VGS =-10 V, ID = -6 A) RDS(on)2 = 190 m MAX. (VGS = -4.0 V, ID =-6 A) Low Ciss: Ciss = 720 pF TYP. Built-in gate protection diode +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +0.15 1.50 -0.15 3.80 +0.15 5.55 -0.15 0.80+0.1 -0.1 0.127 max 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 +0.15 0.50 -0.15 +0.28 1.50 -0.1 +0.25 2.65 -0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to s.

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SMD Type MOS Field Effect Transistor 2SJ598 MOSFICET Features Low on-resistance RDS(on)1 = 130 m MAX. (VGS =-10 V, ID = -6 A) RDS(on)2 = 190 m MAX. (VGS = -4.0 V, ID =-6 A) Low Ciss: Ciss = 720 pF TYP. Built-in gate protection diode +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +0.15 1.50 -0.15 3.80 +0.15 5.55 -0.15 0.80+0.1 -0.1 0.127 max 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 +0.15 0.50 -0.15 +0.28 1.50 -0.1 +0.25 2.65 -0.