2SJ598-ZK - P-Channel Power MOSFET

Renesas

Key Features

Low on-state resistance RDS(on)1 = 130 mΩ MAX. (VGS =.
10 V, ID =.
6 A) RDS(on)2 = 190 mΩ MAX. (VGS =.
4.0 V, ID =.
6 A).
Low Ciss: Ciss = 720 pF TYP.
Built-in gate protection diode.

2SJ598-ZK p-channel power mosfet by Renesas - Datasheet Preview

Datasheet Details

Part number	2SJ598-ZK
Manufacturer	Renesas
File Size	1.07 MB
Description	P-Channel Power MOSFET
Datasheet	2SJ598-ZK Datasheet

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2SJ598-ZK P-Channel Power MOS FET -60V, -12A, 130mΩ Features • Low on-state resistance RDS(on)1 = 130 mΩ MAX. (VGS = –10 V, ID = –6 A) RDS(on)2 = 190 mΩ MAX. (VGS = –4.0 V, ID = –6 A) • Low Ciss: Ciss = 720 pF TYP. • Built-in gate protection diode • Applications : For switching Outline Datasheet R07DS1587EJ0200 Rev.2.00 Feb.3.