2SJ598-ZK Description
2SJ598-ZK P-Channel Power MOS FET -60V, -12A, 130mΩ.
2SJ598-ZK Key Features
- Low on-state resistance RDS(on)1 = 130 mΩ MAX. (VGS = -10 V, ID = -6 A) RDS(on)2 = 190 mΩ MAX. (VGS = -4.0 V, ID = -6 A)
- Low Ciss: Ciss = 720 pF TYP
- Built-in gate protection diode