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2SJ621 Datasheet PDF

NEC 2SJ621

The 2SJ621 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
Part No. 2SJ621
Datasheet 2SJ621 Download
Manufacturer
NEC
Description MOS FIELD EFFECT TRANSISTOR
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2SJ621 datasheet page 1 preview

DESCRIPTION

2.8 ±0.2 PACKAGE DRAWING (Unit: mm) 0.4 +0.1 –0.05 0.65–0.15 +0.1 0.16+0.1 –0.06 3

FEATURES

● 1.8 V drive available
● Low on-state resistance RDS(on)1 = 44 mΩ MAX. (VGS = –4.5 V, ID = –2.0 A) RDS(on)2 = 56 mΩ MAX. (VGS = –3.0 V, ID = –2.0 A) RDS(on)3 = 62 mΩ MAX. (VGS = –2.5 V, ID = –2.0 A) RDS(on)4 = 105 mΩ MAX. (VGS = –1.8 V, ID = –1.5 A) 1.5 0 to 0.1 1 2 0.95 0.95 0.65 0.9 to 1.1 1.9 2.9 ±0.2 1 : Gate 2 : Source 3 : Drain ORDERING INFORMATION PART NUMBER 2SJ621 PACKAGE SC-96 (Mini Mold Thin Type) Marking: XG

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TA = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 Note2 –12 m8.0 m3.5 m12 0.2 1.25 150 –55 to +150 V V A A W W °C °C EQUIVALENT CIRCUIT Drain Total Power Dissipation (TA = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on FR-4 board, t ≤ 5 sec.
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