2SJ626
2SJ626 is MOS FIELD EFFECT TRANSISTOR manufactured by NEC.
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The 2SJ626 is a switching device which can be driven directly by a 4.0 V power source. The 2SJ626 Features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
PACKAGE DRAWING (Unit: mm)
0.4 +0.1
- 0.05
0.65- 0.15
+0.1
0.16+0.1
- 0.06
2.8 ±0.2
Features
- 4.0 V drive available
- Low on-state resistance RDS(on)1 = 388 mΩ MAX. (VGS =
- 10 V, ID =
- 1.0 A) RDS(on)2 = 514 mΩ MAX. (VGS =
- 4.5 V, ID =
- 1.0 A) RDS(on)3 = 556 mΩ MAX. (VGS =
- 4.0 V, ID =
- 1.0 A)
0 to 0.1
1...
