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2SJ626 - MOS FIELD EFFECT TRANSISTOR

General Description

The 2SJ626 is a switching device which can be driven directly by a 4.0 V power source.

Key Features

  • a low on-state resistance and excellent switching characteristics, and is suitable for.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ626 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SJ626 is a switching device which can be driven directly by a 4.0 V power source. The 2SJ626 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. PACKAGE DRAWING (Unit: mm) 0.4 +0.1 –0.05 0.65–0.15 +0.1 0.16+0.1 –0.06 2.8 ±0.2 3 1.5 FEATURES • 4.0 V drive available • Low on-state resistance RDS(on)1 = 388 mΩ MAX. (VGS = –10 V, ID = –1.0 A) RDS(on)2 = 514 mΩ MAX. (VGS = –4.5 V, ID = –1.0 A) RDS(on)3 = 556 mΩ MAX. (VGS = –4.0 V, ID = –1.0 A) 0 to 0.1 1 2 0.95 0.95 0.65 0.9 to 1.1 1.9 2.9 ±0.2 1 : Gate 2 : Source 3 : Drain ORDERING INFORMATION www.