• Part: 2SJ625
  • Description: MOS FIELD EFFECT TRANSISTOR
  • Category: Transistor
  • Manufacturer: NEC
  • Size: 92.95 KB
Download 2SJ625 Datasheet PDF
NEC
2SJ625
2SJ625 is MOS FIELD EFFECT TRANSISTOR manufactured by NEC.
DESCRIPTION The 2SJ625 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. PACKAGE DRAWING (Unit: mm) 0.4 +0.1 - 0.05 0.65- 0.15 +0.1 0.16+0.1 - 0.06 2.8 ±0.2 0 to 0.1 1 2 FEATURES - 1.8 V drive available - Low on-state resistance RDS(on)1 = 113 mΩ MAX. (VGS = - 4.5 V, ID = - 1.5 A) RDS(on)2 = 171 mΩ MAX. (VGS = - 2.5 V, ID = - 1.5 A) RDS(on)3 = 314 mΩ MAX. (VGS = - 1.8 V, ID = - 1.0 A) 0.65 0.9 to 1.1 1.9 2.9 ±0.2 1 : Gate 2 : Source 3 : Drain ORDERING INFORMATION .. PART NUMBER 2SJ625 PACKAGE SC-96 (Mini Mold Thin Type) Marking: XM ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TA = 25°C) Drain Current (pulse) Note1 EQUIVALENT CIRCUIT - 20 m8.0 m3.0 m12 0.2 1.25 150 - 55 to +150 V V A A W W °C °C Gate Protection Diode Source Gate Drain VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch...