2SJ625
2SJ625 is MOS FIELD EFFECT TRANSISTOR manufactured by NEC.
DESCRIPTION
The 2SJ625 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
PACKAGE DRAWING (Unit: mm)
0.4 +0.1
- 0.05
0.65- 0.15
+0.1
0.16+0.1
- 0.06
2.8 ±0.2
0 to 0.1
1 2
FEATURES
- 1.8 V drive available
- Low on-state resistance RDS(on)1 = 113 mΩ MAX. (VGS =
- 4.5 V, ID =
- 1.5 A) RDS(on)2 = 171 mΩ MAX. (VGS =
- 2.5 V, ID =
- 1.5 A) RDS(on)3 = 314 mΩ MAX. (VGS =
- 1.8 V, ID =
- 1.0 A)
0.65 0.9 to 1.1
1.9 2.9 ±0.2 1 : Gate 2 : Source 3 : Drain
ORDERING INFORMATION
..
PART NUMBER 2SJ625
PACKAGE SC-96 (Mini Mold Thin Type)
Marking: XM
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TA = 25°C) Drain Current (pulse)
Note1
EQUIVALENT CIRCUIT
- 20 m8.0 m3.0 m12 0.2 1.25 150
- 55 to +150 V V A A W W °C °C
Gate Protection Diode Source Gate Drain
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch...