• Part: 2SJ601
  • Description: P-Channel Power MOSFET
  • Manufacturer: NEC
  • Size: 87.89 KB
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Datasheet Summary

PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. Features - Low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS = - 10 V, ID = - 18 A) RDS(on)2 = 46 mΩ MAX. (VGS = - 4.0 V, ID = - 18 A) - Low Ciss: Ciss = 3300 pF TYP. - Built-in gate protection diode - TO-251/TO-252 package ORDERING INFORMATION PART NUMBER PACKAGE TO-251 2SJ601-Z TO-252...