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2SJ601 - P-Channel Power MOSFET

General Description

The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.

Key Features

  • Low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 18 A) RDS(on)2 = 46 mΩ MAX. (VGS =.
  • 4.0 V, ID =.
  • 18 A).
  • Low Ciss: Ciss = 3300 pF TYP.
  • Built-in gate protection diode.
  • TO-251/TO-252 package.

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Datasheet Details

Part number 2SJ601
Manufacturer NEC
File Size 87.89 KB
Description P-Channel Power MOSFET
Datasheet download datasheet 2SJ601 Datasheet

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Full PDF Text Transcription (Reference)

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PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ601 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS = –10 V, ID = –18 A) RDS(on)2 = 46 mΩ MAX. (VGS = –4.0 V, ID = –18 A) • Low Ciss: Ciss = 3300 pF TYP. • Built-in gate protection diode • TO-251/TO-252 package ORDERING INFORMATION PART NUMBER PACKAGE 2SJ601 TO-251 2SJ601-Z TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS –60 V www.DataSheet4U.