NEC 2SJ601
The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.| Part No. | 2SJ601 |
|---|---|
| Datasheet | 2SJ601 Download |
| Manufacturer |  NEC |
| Description | P-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● Low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS = –10 V, ID = –18 A) RDS(on)2 = 46 mΩ MAX. (VGS = –4.0 V, ID = –18 A)● Low Ciss: Ciss = 3300 pF TYP.
● Built-in gate protection diode
● TO-251/TO-252 package ORDERING INFORMATION PART NUMBER PACKAGE 2SJ601 TO-251 2SJ601-Z TO-252
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS –60 V Gate to Source Voltage (VGS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VGSS m 20 V ID(DC) m 36 A ID(pulse) m 120 A Total Power Dissipation (TC = 25°C) PT 65 W Total Power Dissipation (TA = 25°C) PT 1.0 W Channel Temperature Tch 150 °C Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2 Tstg –55 to +150 °C IAS –35 A EAS 123 mJ (TO-251) (TO-252) Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, RG = 25 Ω, VGS = –20 V ¡ 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
