2SJ601 Description
2SJ601-VB 2SJ601-VB Datasheet P-Channel 60 V (D-S) 175 °C MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.5 V ID (A) Configuration - 60 0.0135 0.017 - 50 Single.
2SJ601 Key Features
- Trench Power MOSFET
- Package with Low Thermal Resistance
- 100 % Rg and UIS Tested