2SJ601 - 60V P-Channel MOSFET

VBsemi

Key Features

Trench Power MOSFET.
Package with Low Thermal Resistance.
100 % Rg and UIS Tested TO-251 S G D P-Channel MOSFET Drain Connected to Drain-Tab GDS Top View.

2SJ601 60v p-channel mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	2SJ601
Manufacturer	VBsemi
File Size	230.52 KB
Description	60V P-Channel MOSFET
Datasheet	2SJ601 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SJ601-VB 2SJ601-VB Datasheet P-Channel 60 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.5 V ID (A) Configuration - 60 0.0135 0.017 - 50 Single FEATURES • Trench Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested TO-251 S G D P-Channel MOSFET Drain Connected to Drain-Tab GDS Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Currenta TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction)a IS Pulsed Drain Currentb IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.