Datasheet Summary
2SJ601-VB
2SJ601-VB Datasheet P-Channel 60 V (D-S) 175 °C MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS =
- 10 V RDS(on) () at VGS =
- 4.5 V ID (A) Configuration
- 60 0.0135 0.017
- 50 Single
Features
- Trench Power MOSFET
- Package with Low Thermal Resistance
- 100 % Rg and UIS Tested
TO-251
D P-Channel MOSFET
Drain Connected to Drain-Tab
GDS Top...
