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2SJ601 - MOS Field Effect Transistor

Key Features

  • Low on-resistance RDS(on)1 = 31 m RDS(on)2 = 46m MAX. (VGS =-10 V, ID = -18 A) Unit: mm +0.2 9.70-0.2 +0.1 0.80-0.1 +0.28 1.50-0.1 +0.25 2.65-0.1 Built-in gate protection diode 2.3 +0.15 4.60-0.15 +0.15 0.50-0.15 Low Ciss: Ciss = 3300 pF TYP. 0.127 max +0.15 5.55-0.15 1 Gate 2 Drain 3 Source +0.1 0.60-0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse).
  • Power dissipation TC=25 TA=25 Channel temper.

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SMD Type MOS Field Effect Transistor 2SJ601 TO-252 +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 2.30-0.1 +0.8 0.50-0.7 IC MOSFET Features Low on-resistance RDS(on)1 = 31 m RDS(on)2 = 46m MAX. (VGS =-10 V, ID = -18 A) Unit: mm +0.2 9.70-0.2 +0.1 0.80-0.1 +0.28 1.50-0.1 +0.25 2.65-0.1 Built-in gate protection diode 2.3 +0.15 4.60-0.15 +0.15 0.50-0.15 Low Ciss: Ciss = 3300 pF TYP. 0.127 max +0.15 5.55-0.15 1 Gate 2 Drain 3 Source +0.1 0.60-0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s, duty cycle 1% Symbol VDSS VGSS ID ID PD PD Tch Tstg Rating -60 20 36 120 65 1.0 150 -55 to +150 Unit V V A A W W 3.