2SJ601 Datasheet Mos Field Effect Transistor

Manufacturer: Kexin Semiconductor

Overview: SMD Type MOS Field Effect Transistor 2SJ601 TO-252 +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 2.30-0.1 +0.8 0.50-0.

Datasheet Details

Low on-resistance RDS(on)1 = 31 m RDS(on)2 = 46m MAX. (VGS =-10 V, ID = -18 A) Unit: mm +0.2 9.70-0.2 +0.1 0.80-0.1 +0.28 1.50-0.1 +0.25 2.65-0.1 Built-in gate protection diode 2.3 +0.15 4.60-0.15 +0.15 0.50-0.15 Low Ciss: Ciss = 3300 pF TYP. 0.127 max +0.15 5.55-0.15 1 Gate 2 Drain 3 Source +0.1 0.60-0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse).
Power dissipation TC=25 TA=25 Channel temper.

Part Number	Description	Manufacturer
2SJ601	P-Channel Power MOSFET	NEC
2SJ601	P-CHANNEL POWER MOSFET	Renesas
2SJ601	60V P-Channel MOSFET	VBsemi

Part Number	Description
2SJ600	MOSFET
2SJ600-Z	P-Channel MOSFET
2SJ602	MOS Field Effect Transistor
2SJ602-ZJ	P-Channel MOSFET
2SJ603	MOS Field Effect Transistor
2SJ603-ZJ	P-Channel MOSFET
2SJ604	MOS Field Effect Transistors
2SJ604-ZJ	P-Channel MOSFET
2SJ605	MOS Field Effect Transistors
2SJ605-ZJ	P-Channel MOSFET