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2SK2140-Z - N-Channel Power MOSFET

Download the 2SK2140-Z datasheet PDF. This datasheet also covers the 2SK2140 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Transistor designed for high voltage switching applications.

Key Features

  • Low On-state Resistance RDS(on) = 1.5 Ω MAX. (VGS = 10 V, ID = 3.5 A).
  • Low Ciss Ciss = 930 pF TYP.
  • High Avalanche Capability Ratings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SK2140-NEC.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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2SK2144 Silicon N-Channel MOSFET Hitachi Semiconductor
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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SK2140 N-Channel Power MOSFET
2SK2141 SWITCHING N-CHANNEL POWER MOSFET
2SK2109 N-Channel MOSFET
2SK2110 N-Channel MOSFET
2SK2111 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2140, 2SK2140-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2140, 2SK2140-Z is N-channel Power MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-state Resistance RDS(on) = 1.5 Ω MAX. (VGS = 10 V, ID = 3.5 A) • Low Ciss Ciss = 930 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage VDSS 600 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) ID(DC) ±7.0 A Drain Current (pulse)* ID(pulse) ±28 A Total Power Dissipation (Tc = 25 ˚C) PT1 75 W Total Power Dissipation (TA = 25 ˚C) PT2 1.5 W Storage Temperature Tstg –55 to +150 ˚C Channel Temperature Tch 150 ˚C Single Avalanche Current** IAS 7.