Datasheet Summary
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2141 is N-channel Power MOS Field Effect Transistor designed for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeters)
Features
10.0 ± 0.3
- -
- -
φ3.2 ± 0.2
4.5 ± 0.2 2.7 ± 0.2
Low On-state Resistance RDS(on) = 1.1 Ω MAX. (VGS = 10 V, ID = 3.0 A)
15.0 ± 0.3
LOW Ciss
Ciss = 1150 pF TYP.
3 ± 0.1 1 2 3 4 ± 0.2
High Avalanche Capability Ratings Isolated TO-220 (MP-45F) Package
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
VDSS VGSS ID (DC) ID (pulse)-
600 ± 30 ± 6.0 ± 24 35 2.0
- 55 to +150 150 6.0...