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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2140, 2SK2140-Z
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION The 2SK2140, 2SK2140-Z is N-channel Power MOS Field Effect
Transistor designed for high voltage switching applications.
FEATURES • Low On-state Resistance
RDS(on) = 1.5 Ω MAX. (VGS = 10 V, ID = 3.5 A)
• Low Ciss Ciss = 930 pF TYP. • High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS 600 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±7.0
A
Drain Current (pulse)*
ID(pulse) ±28
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
75 W
Total Power Dissipation (TA = 25 ˚C)
PT2
1.5 W
Storage Temperature
Tstg –55 to +150 ˚C
Channel Temperature
Tch 150 ˚C
Single Avalanche Current**
IAS 7.
2SK2140 Datasheet
