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2SK2275 - SWITCHING N-CHANNEL POWER MOSFET

General Description

The 2SK2275 is N-channel Power MOS Field Effect Transistor designed for high voltage switching applications.

Key Features

  • φ3.2 ± 0.2.
  • Low On-state Resistance RDS(on) = 2.8 Ω MAX. (VGS = 10 V, ID = 2.0 A) 3 ± 0.1 1 2 3 4 ± 0.2 12.0 ± 0.2 13.5 MIN. 0.65 ± 0.1 LOW Ciss Ciss = 1 000 pF TYP. High Avalanche Capability Ratings.

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2275 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2275 is N-channel Power MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0 ± 0.3 4.5 ± 0.2 2.7 ± 0.2 FEATURES φ3.2 ± 0.2 • • • Low On-state Resistance RDS(on) = 2.8 Ω MAX. (VGS = 10 V, ID = 2.0 A) 3 ± 0.1 1 2 3 4 ± 0.2 12.0 ± 0.2 13.5 MIN. 0.65 ± 0.1 LOW Ciss Ciss = 1 000 pF TYP. High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) VDSS VGSS ID (DC) ID (pulse)* 900 ± 30 ± 3.5 ± 14 35 2.0 –55 to +150 150 3.5 22 V V A A W W °C °C A mJ 1 2 3 0.7 ± 0.1 2.54 TYP. 15.0 ± 0.