2SK2353 Datasheet | NEC

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2353/2SK2354 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2353/2SK2354 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0 ±0.3. 3.2 ±0.2 2.7 ±0.2 4.5 ±0.2 Features - Low On-Resistance 2SK2353: RDS(on) = 1.4 Ω (VGS = 10 V, ID = 2.5 A) 2SK2354: RDS(on) = 1.5 Ω (VGS = 10 V, ID = 2.5 A) - Low Ciss Ciss = 670 p F TYP. - High Avalanche Capability Ratings - Isolate TO-220 Package QUALITY GRADE Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its remended applications. 15.0 ±0.3 4 ±0.2 0.7 ±0.1 2.54 1.3 ±0.2 1.5 ±0.2 2.54 13.5 MIN. 12.0 ±0.2 3 ±0.1 2.5 ±0.1 0.65...