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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2353/2SK2354
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2353/2SK2354 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS
(in millimeters)
10.0 ±0.3. 3.2 ±0.2 2.7 ±0.2 4.5 ±0.2
FEATURES
• Low On-Resistance
2SK2353: RDS(on) = 1.4 Ω (VGS = 10 V, ID = 2.5 A) 2SK2354: RDS(on) = 1.5 Ω (VGS = 10 V, ID = 2.5 A)
• Low Ciss Ciss = 670 pF TYP. • High Avalanche Capability Ratings • Isolate TO-220 Package
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
15.0 ±0.3
4 ±0.2 0.7 ±0.1 2.54
1.3 ±0.