Datasheet4U Logo Datasheet4U.com

2SK2356-Z - N-Channel MOSFET

General Description

The 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.

10.6 MAX.

3.6 ±0.2 10.0 4.8 MAX.

Low On-Resistance 2SK2355: RDS(on) = 1.4 Ω (VGS = 10

Key Features

  • 6.0 MAX.
  • Low Ciss Ciss = 670 pF TYP.
  • High Avalanche Capability Ratings.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK2350 Silicon N-Channel MOSFET Toshiba Semiconductor
2SK2350 N-Channel MOSFET Transistor Inchange Semiconductor
2SK2351 N-Channel MOSFET Transistor Inchange Semiconductor
2SK2352 N-Channel MOSFET Transistor Inchange Semiconductor
2SK2352 Silicon N-Channel MOSFET Toshiba

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SK2356 N-Channel MOSFET
2SK2353 N-Channel MOSFET
2SK2354 N-Channel MOSFET
2SK2355 N-Channel MOSFET
2SK2355-Z N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. 3.0 ±0.3 PACKAGE DIMENSIONS (in millimeter) 10.6 MAX. 3.6 ±0.2 10.0 4.8 MAX. 1.3 ±0.2 5.9 MIN. 1 2 3 • Low On-Resistance 2SK2355: RDS(on) = 1.4 Ω (VGS = 10 V, ID = 2.5 A) 2SK2356: RDS(on) = 1.5 Ω (VGS = 10 V, ID = 2.5 A) 4 12.7 MIN. 15.5 MAX. FEATURES 6.0 MAX. • Low Ciss Ciss = 670 pF TYP.