Datasheet4U Logo Datasheet4U.com

2SK2357 - N-Channel MOSFET

Datasheet Summary

Description

The 2SK2357/2SK2358 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.

Features

  • Low On-Resistance 2SK2357: RDS(on) = 0.9 Ω (VGS = 10 V, ID = 3.0 A) 15.0 ±0.3 2SK2358: RDS(on) = 1.0 Ω (VGS = 10 V, ID = 3.0 A).
  • Low Ciss Ciss = 1050 pF TYP.
  • High Avalanche Capability Ratings.
  • Isolate TO-220 Package.

📥 Download Datasheet

Datasheet preview – 2SK2357

Datasheet Details

Part number 2SK2357
Manufacturer NEC
File Size 61.75 KB
Description N-Channel MOSFET
Datasheet download datasheet 2SK2357 Datasheet
Additional preview pages of the 2SK2357 datasheet.

📁 Similar Datasheet

  • 2SK2350 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • 2SK2350 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK2351 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK2352 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK2352 - Silicon N-Channel MOSFET (Toshiba)
  • 2SK2311 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • 2SK2312 - N-Channel MOSFET (Toshiba Semiconductor)
  • 2SK2313 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • 2SK2313 - N-Channel MOSFET (INCHANGE)
  • 2SK2314 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
Other Datasheets by NEC

Full PDF Text Transcription

Click to expand full text
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2357/2SK2358 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2357/2SK2358 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0 ±0.3 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2 FEATURES • Low On-Resistance 2SK2357: RDS(on) = 0.9 Ω (VGS = 10 V, ID = 3.0 A) 15.0 ±0.3 2SK2358: RDS(on) = 1.0 Ω (VGS = 10 V, ID = 3.0 A) • Low Ciss Ciss = 1050 pF TYP.
Published: |