Datasheet4U Logo Datasheet4U.com

2SK2372 - N-Channel MOSFET

General Description

The 2SK2371/2SK2372 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.

Key Features

  • Low On-Resistance 20.0 ± 0.2 1.0 15.7 MAX. 4 3.2 ± 0.2 4.7 MAX. 1.5 7.0 2SK2368: RDS(ON) = 0.27 Ω (VGS = 13 V, ID = 10 A).
  • Low Ciss Ciss = 3600 pF TYP.
  • High Avalanche Capability Ratings 1 3.0 ± 0.2 2 3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK2373 N-Channel MOSFET Hitachi Semiconductor
2SK2374 N-Channel MOSFET Panasonic Semiconductor
2SK2375 N-Channel MOSFET Panasonic Semiconductor
2SK2376 N-Channel MOSFET Toshiba Semiconductor
2SK2377 Silicon N-Channel Power F-MOS Panasonic

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SK2370 N-Channel MOSFET
2SK2371 N-Channel MOSFET
2SK2341 Silicon N-Channel Power MOSFET
2SK2353 N-Channel MOSFET
2SK2354 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2371/2SK2372 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2371/2SK2372 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) FEATURES • Low On-Resistance 20.0 ± 0.2 1.0 15.7 MAX. 4 3.2 ± 0.2 4.7 MAX. 1.5 7.0 2SK2368: RDS(ON) = 0.27 Ω (VGS = 13 V, ID = 10 A) • Low Ciss Ciss = 3600 pF TYP. • High Avalanche Capability Ratings 1 3.0 ± 0.