Description
The 2SK2476 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter).
Key Features
- Low On-Resistance RDS (on) = 5.0 Ω (VGS = 10 V, ID = 2.0 A)
- 0±0.3
- 2±0.2
- 5±0.2 2.7±0.2
- 0±0.3 3±0.1 4±0.2