NEC 2SK2477
The 2SK2477 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.| Part No. | 2SK2477 |
|---|---|
| Datasheet | 2SK2477 Download |
| Manufacturer |  NEC |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
PACKAGE DIMENSIONS (in millimeter) 4.7 MAX. 1.5 7.0 1.0±0.2 5.45 4.5±0.2 0.6±0.1 2.8±0.1 1. Gate 2. Drain 3. Source 4. Fin (Drain)FEATURES
● Low On-Resistance RDS (on) = 1.0 Ω (VGS = 10 V, ID = 5.0 A) 1.0 15.7 MAX. 4 3.2±0.2● Low Ciss Ciss = 2 950 pF TYP.
● High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS
(TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID (DC) ID (pulse) PT1 PT2 Tch Tstg IAS EAS 800 ± 30 ± 10 ± 30 150 3.0 150 10 300 V V A A W W ˚C A mJ 20.0±0.2 6.0 1 19 MIN. 3.0±0.2 2 3 2.2±0.2 5.45 MP-88 Drain –55 to +150 ˚C ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 Gate Body Diode Source Document No. D10269EJ1V0DS00 (1st edition) Date Published August 1995 P Printed in Japan © 1995 2SK2477 ELEC...
