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2SK2477 - N-Channel MOSFET

General Description

The 2SK2477 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.

4.7 MAX.

1.5 7.0 1.0±0.2 5.45 4.5±0.2 0.6±0.1 2.8±0.1 1.

Key Features

  • Low On-Resistance RDS (on) = 1.0 Ω (VGS = 10 V, ID = 5.0 A) 1.0 15.7 MAX. 4 3.2±0.2.
  • Low Ciss Ciss = 2 950 pF TYP.
  • High Avalanche Capability Ratings.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SK2476 N-Channel MOSFET
2SK2478 N-Channel MOSFET
2SK2479 N-Channel MOSFET
2SK2409 SWITCHING N-CHANNEL POWER MOSFET
2SK2410 SWITCHING N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2477 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2477 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter) 4.7 MAX. 1.5 7.0 1.0±0.2 5.45 4.5±0.2 0.6±0.1 2.8±0.1 1. Gate 2. Drain 3. Source 4. Fin (Drain) FEATURES • Low On-Resistance RDS (on) = 1.0 Ω (VGS = 10 V, ID = 5.0 A) 1.0 15.7 MAX. 4 3.2±0.2 • Low Ciss Ciss = 2 950 pF TYP.