NEC 2SK2499
The 2SK2499 is N-Channel MOS Field Effect Transistor designed for high current switching applications.| Part No. | 2SK2499 |
|---|---|
| Datasheet | 2SK2499 Download |
| Manufacturer |  NEC |
| Description | SWITCHING N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● Low On-Resistance RDS(on)1 = 9 mW (VGS = 10 V, ID = 25 A) RDS(on)2 = 14 mW (VGS = 4 V, ID = 25 A)● Low Ciss Ciss = 3 400 pF TYP.
● High Avalanche Capability.
● Built-in G-S Protection Diode
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C) Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±50 A Drain Current (pulse)* ID(pulse) ±200 A Total Power Dissipation (Tc = 25 °C) PT1 75 W Total Power Dissipation (TA = 25 °C) PT2 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Single Avalanche Current** IAS 50 A Single Avalanche Energy** EAS 250 mJ * PW - 10 ms, Duty Cycle - 1 % ** Starting Tch = 25 °C, RG = 25 W, VGS = 20 V Æ 0 PACKAGE DIMENSIONS (in millimeters) 10.6 MAX. 4.8 MAX. 3.6 ± 0.2 10.0 1.3 ± 0.2 3.0 ± 0.3 6.0 MAX. 5.9 MIN. 12.7 MIN. 15.5 MAX. 4 1 23 1.3 ± 0.2 0.5 ± 0.2 0.75 ± 0.1 2.54 2.8 ± 0.2 2.54 1. Gate 2. Drain 3. Source 4. Fin (Drain) JEDEC: TO-220AB MP-25 (TO-220) (10.0) 4 4.8 MAX. 1.3 ± 0.2 8.5 ± 0.2 1.0 ± 0.5 1.5 MAX.
