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2SK2499-Z - SWITCHING N-CHANNEL POWER MOSFET

This page provides the datasheet information for the 2SK2499-Z, a member of the 2SK2499 SWITCHING N-CHANNEL POWER MOSFET family.

Datasheet Summary

Description

for high current switching applications.

Features

  • Low On-Resistance RDS(on)1 = 9 mW (VGS = 10 V, ID = 25 A) RDS(on)2 = 14 mW (VGS = 4 V, ID = 25 A).
  • Low Ciss Ciss = 3 400 pF TYP.
  • High Avalanche Capability.
  • Built-in G-S Protection Diode.

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Datasheet preview – 2SK2499-Z

Datasheet Details

Part number 2SK2499-Z
Manufacturer NEC
File Size 118.12 KB
Description SWITCHING N-CHANNEL POWER MOSFET
Datasheet download datasheet 2SK2499-Z Datasheet
Additional preview pages of the 2SK2499-Z datasheet.

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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2499, 2SK2499-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2499 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-Resistance RDS(on)1 = 9 mW (VGS = 10 V, ID = 25 A) RDS(on)2 = 14 mW (VGS = 4 V, ID = 25 A) • Low Ciss Ciss = 3 400 pF TYP. • High Avalanche Capability. • Built-in G-S Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±50 A Drain Current (pulse)* ID(pulse) ±200 A Total Power Dissipation (Tc = 25 °C) PT1 75 W Total Power Dissipation (TA = 25 °C) PT2 1.
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