2SK2499-Z Datasheet | NEC

DESCRIPTION The 2SK2499 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES - Low On-Resistance RDS(on)1 = 9 m W (VGS = 10 V, ID = 25 A) RDS(on)2 = 14 m W (VGS = 4 V, ID = 25 A) - Low Ciss Ciss = 3 400 p F TYP. - High Avalanche Capability. - Built-in G-S Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage VDSS Gate to Source Voltage VGSS ±20 Drain Current (DC) ID(DC) ±50 Drain Current (pulse)- ID(pulse) ±200 Total Power Dissipation (Tc = 25 °C) PT1 Total Power Dissipation (TA = 25 °C) PT2 Channel Temperature Tch °C Storage Temperature Tstg - 55 to +150 °C Single Avalanche Current- - IAS Single Avalanche...