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2SK2499-Z - SWITCHING N-CHANNEL POWER MOSFET

Download the 2SK2499-Z datasheet PDF. This datasheet also covers the 2SK2499 variant, as both devices belong to the same switching n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

for high current switching applications.

Key Features

  • Low On-Resistance RDS(on)1 = 9 mW (VGS = 10 V, ID = 25 A) RDS(on)2 = 14 mW (VGS = 4 V, ID = 25 A).
  • Low Ciss Ciss = 3 400 pF TYP.
  • High Avalanche Capability.
  • Built-in G-S Protection Diode.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SK2499_NEC.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2SK2490 VZ Series Power MOSFET Shindengen Electric Mfg.Co.Ltd
2SK2491 VZ Series Power MOSFET Shindengen Electric Mfg.Co.Ltd
2SK2492 VZ Series Power MOSFET Shindengen Electric Mfg.Co.Ltd
2SK2493 N-Channel MOSFET Toshiba Semiconductor
2SK2494-01 N-channel MOS-FET Fuji Electric

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SK2499 SWITCHING N-CHANNEL POWER MOSFET
2SK2498 N-Channel MOSFET
2SK2409 SWITCHING N-CHANNEL POWER MOSFET
2SK2410 SWITCHING N-CHANNEL POWER MOSFET
2SK2412 SWITCHING N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2499, 2SK2499-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2499 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-Resistance RDS(on)1 = 9 mW (VGS = 10 V, ID = 25 A) RDS(on)2 = 14 mW (VGS = 4 V, ID = 25 A) • Low Ciss Ciss = 3 400 pF TYP. • High Avalanche Capability. • Built-in G-S Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±50 A Drain Current (pulse)* ID(pulse) ±200 A Total Power Dissipation (Tc = 25 °C) PT1 75 W Total Power Dissipation (TA = 25 °C) PT2 1.