2SK2498
2SK2498 is N-Channel MOSFET manufactured by NEC.
DESCRIPTION
2SK2498 is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter)
10.0±0.3 4.5±0.2 2.7±0.2
FEATURES
- Super Low On-State Resistance
RDS (on)1 ≤ 9 mΩ (VGS = 10 V, ID = 25 A) RDS (on)2 ≤ 14 mΩ (VGS = 4 V, ID = 25 A)
3.2±0.2
4±0.2
- -
- -
15.0±0.3
High Avalanche Capability Ratings Isolate TO-220 Package Buit-in G-S Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)- Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current-
- Single Avalanche Energy-
- - PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 60 ± 20 ± 50 ± 200 35 2.0 150 50 250 V V A A W W ˚C
1 2 3 2.54 0.7±0.1
1.3±0.2 1.5±0.2 2.54
13.5MIN.
12.0±0.2
Low Ciss
Ciss = 3400 p F TYP.
3±0.1
2.5±0.1 0.65±0.1 1. Gate 2. Drain 3. Source
- 55 to +150 ˚C A m J
MP-45F (ISOLATED TO-220)
Drain
- - Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
Gate
Body Diode
Gate Protection Diode Source
Document No. D10044EJ1V0DS00 (1st edition) Date Published July 1995 P Printed in Japan
©
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC Drain to Source On-Resistance SYMBOL RDS (on)1 RDS (on)2 Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS (off) | yfs | IDSS IGSS Ciss Coss Crss td (on) tr td (off) tf QG QGS QGD VF (S-D) trr Qrr 3400 1600 770 55 360 480 360 152 11 60 0.92 105 265 1.0 20 MIN. TYP. 7.3 11 1.5 58 10 ± 10 MAX. 9.0 14 2.0 UNIT mΩ mΩ V S TEST CONDITIONS VGS = 10 V, ID = 25 A VGS = 4 V, ID...
