2SK3056 Overview
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
2SK3056 Key Features
- Low On-State Resistance RDS(on)1 = 34 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 = 50 mΩ MAX. (VGS = 4.0 V, ID = 16 A)
- Low Ciss : Ciss = 920 pF TYP
- Built-in Gate Protection Diode