2SK3057 Description
This product is N-Channel MOS Field Effect Transistor designed for high current switching application.
2SK3057 Key Features
- Low on-state resistance RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 23 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4 V, ID = 23 A)
- Low Ciss: Ciss = 2100 pF TYP
- Built-in gate protection diode
- Isolated TO-220 package